Etching method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsTakahiro Yokoyama, Maju Tomura, Yoshihide Kihara, Ryutaro Suda, Takatoshi Orui
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Abstract
An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.
Claims20
An etching method, comprising:
- providing a substrate in a chamber of a plasma processing apparatus, the substrate including a silicon-containing film that at least includes a silicon oxide film and a silicon nitride film;
- supplying a process gas to the chamber, the process gas containing a halogen component and a phosphorous-containing gas as a phosphorus component;
- and
- etching the silicon-containing film with a plasma generated from the process gas, wherein
- the etching includes setting a flow rate proportion of the phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a ratio of an etching rate of an alternate stack of the silicon oxide film and the silicon nitride film to an etching rate of the silicon oxide film, and
- the ratio is in an inclusive range of 0.8 to 1.2.
An etching method, comprising:
- providing a substrate in a chamber of a plasma processing apparatus, the substrate including a silicon-containing film that at least includes a silicon oxide film and a silicon nitride film;
- supplying a process gas to the chamber, the process gas containing a halogen component and a phosphorous-containing gas as a phosphorus component;
- etching the silicon-containing film with a plasma generated from the process gas;
- forming a protective film on a surface of a side wall of a recess formed in the silicon-containing film by the etching, the protective film containing phosphorus provided by the phosphorous-containing gas;
- and
- setting a temperature of the substrate to lower than or equal to 0° C. at a start of the etching, wherein
- the etching and the forming the protective film are performed at a same time,
- the silicon-containing film includes a single layer film and a multilayer film, and
- the etching includes etching the single layer film and the multilayer film at a same time.
An etching method, comprising:
- providing a substrate in a chamber of a plasma processing apparatus, the substrate including a silicon-containing film that at least includes a silicon oxide film and a silicon nitride film;
- supplying a process gas to the chamber, the process gas containing at least one of a fluorocarbon or a hydrofluorocarbon, at least one phosphorous-containing gas, and at least one hydrogen-containing gas selected from the group consisting of H2, hydrogen fluoride, a hydrocarbon, a hydrofluorocarbon and NH3;
- and
- etching the silicon-containing film with a plasma generated from the process gas, wherein
- the silicon-containing film includes a single layer film and a multilayer film, and
- the etching includes:
- etching the single layer film and the multilayer film at a same time, and
- setting a flow rate proportion of the phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a ratio of an etching rate of an alternate stack of the silicon oxide film and the silicon nitride film to an etching rate of the silicon oxide film, the ratio being in an inclusive range of 0.8 to 1.2.
Dependencies are inferred from the claim text.