In-situ p-type activation of III-nitride films grown via metal organic chemical vapor deposition
AssigneeNorthwestern University
InventorManijeh Razeghi
Life of this patent
Estimating the term…
Abstract
Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH3 and N2; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.
Claims20
A method for activating a p-type dopant in a group III-Nitride semiconductor, the method comprising:
- (a) annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere consisting of NH3 and N2;
- and
- (b) cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.
A method for activating a p-type dopant in a group III-Nitride semiconductor, the method comprising:
- (a) annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via MOCVD at a first temperature for a first period of time under an atmosphere comprising NH3 and N2;
- and
- (b) cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film,
- wherein step (b) comprises cooling to an intermediate temperature followed by cooling from the intermediate temperature to the second temperature over a second period of time, and
- wherein the intermediate temperature is in a range of from 840° C. to 780° C., the second temperature is in a range of from 750° C. to 650° C., and the second period of time is in a range of from 5 minutes to 15 minutes.
A method for activating a Mg dopant in a group III-Nitride semiconductor, the method comprising:
- (a) annealing, in situ, a film of a group III-Nitride semiconductor comprising a Mg dopant formed via MOCVD at a first temperature for a first period of time under an atmosphere consisting of NH3 and N2;
- (b) cooling, in situ, the film of the group III-Nitride semiconductor to an intermediate temperature that is lower than the first temperature;
- and
- (c) cooling, in situ, the film of the group III-Nitride semiconductor from the intermediate temperature to a second temperature over a second period of time under an atmosphere comprising N2 in the absence of NH3, wherein the second temperature is lower than the first temperature and the intermediate temperature, to form an activated Mg doped III-Nitride semiconductor film.
A method for activating a Mg dopant in a group III-Nitride semiconductor, the method comprising:
- (a) annealing, in situ, a film of a group III-Nitride semiconductor comprising a Mg dopant formed via MOCVD at a first temperature for a first period of time under an atmosphere comprising NH3 and N2;
- (b) cooling, in situ, the film of the group III-Nitride semiconductor to an intermediate temperature that is lower than the first temperature;
- and
- (c) cooling, in situ, the film of the group III-Nitride semiconductor from the intermediate temperature to a second temperature over a second period of time under an atmosphere comprising N2 in the absence of NH3, wherein the second temperature is lower than the first temperature and the intermediate temperature, to form an activated Mg doped III-Nitride semiconductor film,
- wherein the intermediate temperature is in a range of from 840° C. to 780° C., the second temperature is in a range of from 750° C. to 650° C., and the second period of time is in a range of from 5 minutes to 15 minutes.
A method for activating a p-type dopant in a group III-Nitride semiconductor, the method comprising:
- (a) forming a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD);
- (b) annealing, in situ, after step (a) and prior to step (c), the film of the group III-Nitride semiconductor at a first temperature for a first period of time under an atmosphere comprising NH3 and N2;
- and
- (c) cooling, in situ, after step (b), the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.
Dependencies are inferred from the claim text.