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US 11,600,490 B2Granted
Silicon film forming method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsMitsuhiro Okada, Tatsuya Miyahara, Keisuke Fujita
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Abstract
There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.
Claims8
A method of forming a silicon film, the method comprising:
- a film forming step of forming the silicon film on a base;
- and
- an etching step of reducing a film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film,
- wherein concave-convex portions are formed in a surface of the base,
- wherein the etching step includes etching the silicon film formed on the concave-convex portions of the base in a conformal manner,
- wherein the etching step is performed at a temperature higher than a temperature in the film forming step,
- wherein the film forming step and the etching step are successively performed in a same processing chamber, and
- wherein the temperature in the film formation step is equal to or higher than 380 degrees C.
5 more elements
A substrate processing apparatus comprising:
- a processing container in which a substrate is accommodated;
- a gas supply part configured to introduce a film-forming gas and an etching gas into the processing container;
- and
- a controller configured to perform a control such that a silicon film is formed on the substrate, and the etching gas containing bromine or iodine is supplied onto the silicon film to reduce the film thickness of the silicon film,
- wherein concave-convex portions are formed in a surface of the substrate,
- wherein the silicon film formed on the concave-convex portions of the substrate is etched in a conformal manner,
- wherein a temperature when etching the silicon film is higher than a temperature when forming the silicon film,
- wherein the forming the silicon film and the etching the silicon film are successively performed in a same processing chamber, and
- wherein the temperature when forming the silicon film is equal to or higher than 380 degrees C.
6 more elements
Dependencies are inferred from the claim text.