Method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorsNaofumi Ohashi, Toshiyuki Kikuchi
Life of this patent
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Abstract
There is provided a technique that includes: loading an m-th substrate into a process chamber, wherein m is an integer less than n; forming a film on the m-th substrate by heating the m-th substrate in the process chamber; unloading the m-th substrate from the process chamber; waiting for a predetermined time in the process chamber, in a state where the substrates are not present in the process chamber, after the act of unloading; loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting; and forming a film on the next substrate by heating the next substrate in the process chamber.
Claims17
A method of manufacturing a semiconductor device, which processes n substrates as one lot, comprising:
- loading an m-th substrate into a process chamber, wherein m is an integer less than n;
- forming a film having a grain size on the m-th substrate by heating the m-th substrate in the process chamber;
- unloading the m-th substrate from the process chamber;
- waiting for a predetermined time in the process chamber until a temperature of the process chamber becomes equal to or lower than a reference temperature at which a grain size of a film is equal to or larger than a predetermined size, in a state where the substrates are not present in the process chamber, after the act of unloading;
- loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting;
- and
- forming a film having the grain size that is equal to or larger than the predetermined size on the next substrate by heating the next substrate in the process chamber.
A method of processing a substrate that processes n substrates as one lot, comprising:
- loading an m-th substrate into a process chamber, wherein m is an integer less than n;
- forming a film having a grain size on the m-th substrate by heating the m-th substrate in the process chamber;
- unloading the m-th substrate from the process chamber;
- waiting for a predetermined time in the process chamber, until a temperature of the process chamber becomes equal to or lower than a reference temperature at which a grain size of a film is equal to or larger than a predetermined size, in a state where the substrates are not present in the process chamber, after the act of unloading;
- loading a next substrate, which is one of the n substrates to be processed next, into the process chamber, after the act of waiting;
- and
- forming a film having the grain size that is equal to or larger than the predetermined size on the next substrate by heating the next substrate in the process chamber.
Dependencies are inferred from the claim text.