Systems and methods for depositing low-κdielectric films

A semiconductor processing method comprising:

• flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, wherein the deposition precursors include a silicon-carbon-and-oxygen-containing precursor;
• generating a deposition plasma from the deposition precursors within the substrate processing region, wherein the semiconductor processing chamber is characterized by a temperature greater than 425° C. during the generation of the deposition plasma;
• and
• depositing a silicon-carbon-and-oxygen-containing material on a substrate from plasma effluents of the deposition plasma, wherein the silicon-carbon-and-oxygen-containing material as-deposited is characterized by a dielectric constant less than or about 3.0.

A semiconductor processing method comprising:

• flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, wherein the deposition precursors include a silicon-containing precursor and molecular oxygen (O2), and wherein the silicon-containing precursor has a flow rate into the semiconductor processing chamber of less than or about 2000 mgm, and the O2 has a flow rate greater than or about 120 sccm;
• generating a deposition plasma from the deposition precursors within the substrate processing region;
• and
• depositing a silicon-carbon-and-oxygen-containing material on a substrate from plasma effluents of the deposition plasma, wherein the silicon-carbon-and-oxygen-containing material as-deposited is characterized by a dielectric constant less than or about 3.0, and wherein the silicon-carbon-and-oxygen-containing material as-deposited is characterized by a hardness of greater than or about 3 GPa.