Substrate support, plasma processing apparatus, and focus ring

A plasma processing apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber, the substrate support including,
• a substrate chuck region,
• a focus ring chuck region surrounding the substrate chuck region,
• a focus ring having a first face and a second face, the first face being in contact with the focus ring chuck region, the second face extending downward from the first face and facing a sidewall of the focus ring chuck region,
• a connector having a first portion and a second portion, the first portion being disposed between the second face of the focus ring and the sidewall of the focus ring chuck region, the first portion being electrically connected to the second face of the focus ring, the second portion extending radially outward from a bottom of the first portion,
• an insulator disposed between the connector and the sidewall of the focus ring chuck region,
• a conductive path electrically connected to a lower end of the connector and extending downward from the lower end of the connector, and
• a holder configured to press the second portion of the connector downward to hold the connector on the conductive path and press the first portion of the connector against the second face of the focus ring, and
• a plasma generator configured to generate a plasma in the chamber.