Thermistor with protective film and manufacturing method thereof
AssigneeMitsubishi Materials Corporation
InventorsTakehiro Yonezawa, Miki Adachi
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Abstract
A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
Claims3
A thermistor with a protective film, comprising:
- a thermistor element;
- a protective film formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less and formed in contact with the thermistor element;
- and
- an electrode portion,
- wherein an alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film, and
- as obtained by line analysis in a direction perpendicular to the interface using an energy dispersion type X-ray spectroscopic analyzer, a maximum value of an alkali metal presence ratio, in which a detection amount (atom %) of the alkali metal is divided by a detection amount (atom %) of all metals in a region including the interface, is 0.03 or more, and a value obtained by dividing the maximum value by an average value of the alkali metal presence ratio in the protective film is 1.5 or more.
A method for manufacturing a thermistor with a protective film which is a method for manufacturing the thermistor with a protective film including a thermistor element, a protective film formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less and formed in contact with the thermistor element, and an electrode portion, the method comprising:
- a protective film-forming step of forming the protective film by immersing the thermistor element in a reaction solution including silicon alkoxide, an alkali metal, water, an organic solvent, and an alkali, and causing SiO2 to precipitate on a surface of the thermistor element by a hydrolysis reaction and a polycondensation reaction of the silicon alkoxide,
- wherein in the protective film, the alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
Dependencies are inferred from the claim text.