Efficient read of NAND with read disturb mitigation

A method of operating non-volatile storage, the method comprising:

• applying a read spike voltage to word lines and drain side select lines in a block of non-volatile memory cells arranged as NAND strings, including:
• raising a voltage on the word lines from a steady state voltage to a read pass voltage and lowering the voltage on the word lines from the read pass voltage to the steady state voltage;
• and
• raising a voltage on the drain side select lines from the steady state voltage to a select voltage and lowering the voltage on the drain side select lines from the select voltage to the steady state voltage;
• sensing groups of memory cells in the block at different times after lowering the voltages on the word lines and the select lines to the steady state voltage, including:
• raising a voltage on a selected word line from the steady state voltage to a read reference voltage while raising voltages on unselected word lines from the steady state voltage to a read pass voltage and while raising a voltage on a selected drain side select line in the block from the steady state voltage to the select voltage prior to the sensing of each group;
• sensing a selected group of the memory cells while the selected word line is at the read reference voltage, the unselected word lines are at the read pass voltage, and the selected drain side select line is at the select voltage;
• and
• lowering the voltage on the selected word line from the read reference voltage to the steady state voltage while lowering the voltage on the unselected word lines from the read pass voltage to the steady state voltage and while lowering the voltage on the selected drain side select line from the select voltage to the steady state voltage after each read but a final read;
• raising the voltage on the selected word line to the read pass voltage after the final read;
• and
• lowering the voltages on the selected word line and the unselected word lines from the read pass voltage to the steady state voltage in unison after the final read.

A non-volatile storage system, comprising:

• a three-dimensional memory array comprising non-volatile memory cells arranged as NAND strings, each NAND string having a select transistor, the three-dimensional memory array comprising sets of word lines, each set of word lines connected to a set of the NAND strings, the three-dimensional memory array comprising select lines, each select line connected the select transistors of a sub-set of NAND strings that are connected to a set of the word lines, wherein the three-dimensional memory array comprises bit lines;
• and
• a control circuit in communication with the three-dimensional memory array, wherein the control circuit:
• applies first voltages to a first set of the word lines and second voltages to a plurality of select lines connected to a corresponding plurality of sets of the NAND strings, the first voltages turn on memory cells on the plurality of sets of NAND strings, the second voltages turn on select transistors of the plurality of sets of NAND strings;
• after applying the first and the second voltages, raises a voltage on a selected word line in the first set of the word lines from a steady state voltage to a first read reference voltage and holds the voltage on the selected word line at the first read reference voltage;
• senses multiple groups of memory cells connected to the selected word line at different times while the selected word line is held at the first read reference voltage and while unselected word lines in the first set of the word lines are at a read pass voltage, wherein each group of memory cells resides on a different set of the plurality of sets of NAND strings, including selecting each group of memory cells with a different select line of the plurality of select lines;
• raises the voltage on the selected word line to the read pass voltage after a final read of the multiple groups of memory cells;
• and
• lowers the voltages on the selected word line and the unselected word lines from the read pass voltage to the steady state voltage in unison.