Back to results
US 11,600,339 B2Granted
Operation method for a memory device
AssigneeMacronix International Co., Ltd.
InventorsChih-Chieh Cheng, Chun-Chang Lu, Wen-Jer Tsai
Life of this patent
Estimating the term…
Abstract
An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-tum on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line voltage after the read period is finished. Wherein the first dummy word line voltage is lower than the second dummy word line voltage.
Claims7
An operation method for a memory device, the operation method including:
- increasing a dummy word line voltage to a first dummy word line voltage during a pre-turn on period;
- increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period;
- and
- lowering the dummy word line voltage after the read period is finished,
- wherein the first dummy word line voltage is lower than the second dummy word line voltage;
- and the second dummy word line voltage is corresponding to a pass voltage.
3 more elements
Dependencies are inferred from the claim text.