Memory device and method of operating the memory device
AssigneeSK hynix Inc.
InventorJae Woong Kim
Life of this patent
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Abstract
The present technology relates to an electronic device. A memory device configured to perform a sensing operation based on a charge degree of a sensing node includes a memory cell array including a plurality of memory cells, a peripheral circuit including a page buffer connected to a selected memory cell among the plurality of memory cells through a bit line, and configured to perform a sensing operation on the selected memory cell, and control logic configured to control the peripheral circuit to precharge a source line among lines connected to the memory cell array and perform the sensing operation based on a degree at which a sensing node in the page buffer is charged, during the sensing operation.
Claims19
A memory device comprising:
- a memory cell array including a plurality of memory cells;
- a peripheral circuit including a page buffer connected to a selected memory cell among the plurality of memory cells through a bit line, and configured to perform a sensing operation on the selected memory cell;
- and
- a control logic configured to control the peripheral circuit to precharge a source line among lines connected to the memory cell array and perform the sensing operation based on a degree at which a sensing node in the page buffer is charged, during the sensing operation,
- wherein the control logic controls the peripheral circuit to turn on a first transistor connected to a current path which is formed from the source line to the bit line, among transistors included in the page buffer.
A method of operating a memory device, the method comprising:
- precharging a source line among lines connected to a memory cell array;
- applying a sensing voltage to a selected word line connected to a selected memory cell included in the memory cell array among the lines;
- and
- sensing the selected memory cell based on a degree at which a sensing node in a page buffer connected to the selected memory cell through a bit line is charged,
- wherein precharging the source line comprises:
- turning on a first transistor connected to a current path which is formed from the source line to the bit line, among transistors included in the page buffer;
- and
- forming the current path.
Dependencies are inferred from the claim text.