Adjustment of a voltage corresponding to a programming distribution based on a program targeting rule

A method comprising:

• identifying a first logical page type and a second logical page type each comprising a plurality of programming distributions of a memory device;
• determining that a bit error rate (BER) for the first logical page type is less than a BER for the second logical page type;
• identifying a set of rules corresponding to the determination that the BER for the first logical page type is less than the BER for the second logical page type;
• identifying a program targeting rule of the set of rules based on a valley between an erase distribution and a programming distribution adjacent to the erase distribution having a lowest valley margin of a plurality of valley margins corresponding to the plurality of programming distributions of the memory device;
• and
• performing, based on the program targeting rule, a program targeting operation to adjust a voltage associated with one or more programming distributions of the memory device.

A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

• identifying a first logical page type and a second logical page type each comprising a plurality of programming distributions of a memory device;
• determining that a bit error rate (BER) for the first logical page type is less than a BER for the second logical page type;
• identifying a set of rules corresponding to the determination that the BER for the first logical page type is less than the BER for the second logical page type;
• identifying a program targeting rule of the set of rules based on a valley between an erase distribution and a programming distribution adjacent to the erase distribution having a lowest valley margin of a plurality of valley margins corresponding to the plurality of programming distributions of the memory device;
• and
• performing, based on the program targeting rule, a program targeting operation to adjust a voltage associated with one or more programming distributions of the memory device.