Performing a refresh operation based on system characteristics

A method comprising:

• detecting an increase in temperature of a memory component from a first temperature range associated with a first state to a second temperature range associated with a second state of an operation condition of the memory component;
• determining a maximum value for a refresh period corresponding to a time-based relationship between the second temperature range and a power budget assigned to the memory component;
• decreasing the refresh period associated with the memory component from the maximum value based on detecting the second state of the operation condition, the refresh period corresponding to a period of time between a first time when a write operation is performed on a segment of the memory component and a second time when a refresh operation is to be performed on the segment;
• and
• performing the refresh operation on the segment of the memory component according to the refresh period.

A system comprising:

• a plurality of memory components;
• and
• a processing device operatively coupled with the plurality of memory components, the processing device to perform operations comprising:
• receiving a command for a write operation to store data on a segment of a memory component of the plurality of memory components;
• identifying the memory component associated with the write operation from the plurality of memory components;
• detecting a decrease in temperature of the memory component from a first temperature range associated with a first state to a second temperature range associated with a second state of an operation condition of the memory component;
• determining a maximum value for a refresh period corresponding to a time-based relationship between the second temperature range and a power budget assigned to the memory component;
• increasing the refresh period associated with the memory component without exceeding the maximum value based on detecting the second state of the operation condition, the refresh period corresponding to a period of time between a first time when the write operation is performed on the segment of the memory component and a second time when a refresh operation is to be performed on the segment;
• and
• performing the refresh operation on the segment of the memory component according to the refresh period.