Vacuum process apparatus and vacuum process method

A vacuum process apparatus comprising:

• a ta-C film forming apparatus configured to form a surface protective layer made of a ta-C film on a substrate;
• and
• a transportation apparatus configured to transport the substrate from the ta-C film forming apparatus to an unload chamber without exposing the substrate to atmosphere,
• wherein the vacuum process apparatus including a plurality of chambers, each configured to perform a predetermined process with respect to the substrate, connected to each other in an endless rectangular form,
• the plurality of chambers include a direction changing chamber arranged at a position of a corner of the rectangular form to change a transport direction of the substrate, a load lock chamber configured to supply the substrate to the vacuum process apparatus, the unload chamber configured to unload the substrate from the vacuum process apparatus, a ta-C film formation chamber including the ta-C film forming apparatus, and
• wherein the unload chamber comprises:
• a radical process chamber in which the substrate is arranged, the radical process chamber comprising a cassette configured to hold the substrate in a direction perpendicular to a ground and in a state in which the surface protective layer and an opposing surface protective layer of the substrate are radical processable,
• a radical generator configured to generate radicals from a process gas,
• a radical introduction path configured to introduce the radicals generated by the radical generator into the radical process chamber,
• the radicals are irradiated in a direction parallel to the surface protective layer of the substrate,
• wherein the surface protective layer contains a low sp3 bonding ratio layer and a high sp3 bonding ratio layer formed thereon,
• and
• wherein the radical process is applied to the low sp3 bonding ratio layer in the radical process chamber.