Lithographic memristive array

A neural network, comprising:

• a first layer including a first plurality of conductive lines, the first plurality of conductive lines being lithographically defined such that the first plurality of conductive lines are parallel;
• a second layer including a second plurality of conductive lines, the second layer being different from the first layer, the second plurality of conductive lines being insulated from the first plurality of conductive lines, the second plurality of conductive lines being lithographically defined such that the second plurality of conductive lines are parallel and are at a first nonzero acute angle from the first plurality of lines;
• a third layer including a third plurality of conductive lines, the third layer being different from the first layer and from the second layer, the third plurality of conductive lines being insulated from the second plurality of conductive lines, the third plurality of conductive lines being lithographically defined such that the third plurality of conductive lines are parallel are at a second nonzero acute angle from the second plurality of lines, and are at a nonzero angle from the first plurality of lines;
• a plurality of memristive interlayer connectors being memristively coupled with a first portion of the first plurality of conductive lines, memristively coupled with a second portion of the second plurality of conductive lines, and memristively coupled with a third portion of the third plurality of lines, such that the plurality of memristive interlayer connectors are sparsely coupled with the first plurality of conductive lines, sparsely coupled with the second plurality of conductive lines, and sparsely coupled with the third plurality of conductive lines, each of the plurality of memristive interlayer connectors including a conductive portion and a memristive portion, the memristive portion residing between the conductive portion and at least one corresponding line of at least one of the first plurality of conductive lines or of the second plurality of conductive lines, the plurality of memristive interlayer connectors being lithographically defined and intersecting the first portion of the first plurality of conductive lines, the second portion of the second plurality of conductive lines, and the third portion of the third plurality of conductive lines, the first layer, the second layer, the third layer, and the plurality of memristive interlayer connectors forming at least one sparsely coupled irregular network;
• and
• a plurality of neurons coupled to the plurality of memristive interlayer connectors;
• wherein the first plurality of predetermined positions, the second plurality of predetermined positions, and the plurality of predetermined connector locations are configured such that the first layer, the second layer, and the plurality of memristive interlayer connectors form at least one sparsely coupled irregular network.

A method, comprising:

• lithographically defining a first plurality of conductive lines in a first layer such that the first plurality of conductive lines are parallel;
• lithographically defining a second plurality of conductive lines in a second layer, the second layer being different from the first layer, the second plurality of conductive lines being insulated from the first plurality of conductive lines such that the second plurality of conductive lines are parallel and are at a first nonzero acute angle from the first plurality of lines;
• lithographically defining a third layer including a third plurality of conductive lines, the third layer being different from the first layer and from the second layer, the third plurality of conductive lines being insulated from the second plurality of conductive lines, the third plurality of conductive lines being lithographically defined such that the third plurality of conductive lines are parallel, are at a second nonzero acute angle from the second plurality of lines, and are at a nonzero angle from the first plurality of lines;
• and
• providing a plurality of memristive interlayer connectors memristively coupled with a first portion of the first plurality of conductive lines, memristively coupled with a second portion of the second plurality of conductive lines, and memristively coupled with a third portion of the third plurality of lines, such that the plurality of memristive interlayer connectors are sparsely coupled with the first plurality of conductive lines and sparsely coupled with the second plurality of conductive lines, each of the plurality of memristive interlayer connectors including a conductive portion and a memristive portion, the memristive portion residing between the conductive portion and at least one corresponding line of at least one of the first plurality of conductive lines or of the second plurality of conductive lines, the plurality of memristive interlayer connectors being lithographically defined and intersecting the first portion of the first plurality of conductive lines, the second portion of the second plurality of conductive lines, and the third portion of the third plurality of conductive lines, the first layer, the second layer, the third layer, and the plurality of memristive interlayer connectors forming at least one sparsely coupled irregular network.