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US 11,599,016 B2Granted
Physical vapor deposition system and processes
AssigneeApplied Materials, Inc.
InventorsVibhu Jindal, Wen Xiao, Sanjay Bhat
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Abstract
A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.
Claims15
A method of manufacturing an extreme ultraviolet (EUV) mask blank, the method comprising:
- forming a reflective layer pair comprising silicon and molybdenum, wherein forming the reflective layer pair comprises:
- (a) sputtering a silicon target in a physical vapor deposition (PVD) chamber using a DC power source and an flowing inert gas in the PVD chamber to form a silicon layer on a substrate;
- (b) sputtering the silicon target using an RF power source and flowing nitrogen gas in the PVD chamber to form a first Si3N4 interface layer on the silicon layer and a Si3N4 layer on the silicon target;
- (c) sputtering a molybdenum target using a DC power source and flowing an inert gas in the PVD chamber to form a molybdenum layer on the Si3N4 layer;
- (d) sputtering the silicon target including the Si3N4 layer thereon using a DC power source and flowing an inert gas in the PVD chamber to form a second Si3N4 interface layer on the molybdenum layer until the Si3N4 layer is depleted from silicon target and then depositing a silicon layer on the second Si3N4 interface layer;
- and
- repeating steps (b) through (d) to form a multilayer stack comprising a plurality of reflective layer pairs.
4 more elements
A method of manufacturing an EUV mask blank comprising:
- forming a reflective layer pair comprising silicon and molybdenum, wherein forming the reflective layer pair comprises:
- (a) sputtering a silicon target in a physical vapor deposition (PVD) chamber using a DC power source and an flowing inert gas in the PVD chamber to form a silicon layer on a substrate;
- (b) sputtering the silicon target using an RF power source and flowing nitrogen gas in the PVD chamber to form a first Si3N4 interface layer on the silicon layer and a Si3N4 layer on the silicon target;
- (c) sputtering a molybdenum target using a DC power source and flowing an inert gas in the PVD chamber to form a molybdenum layer on the Si3N4 layer;
- (d) sputtering the silicon target including the Si3N4 layer thereon using a DC power source and flowing an inert gas in the PVD chamber to form a second Si3N4 interface layer on the molybdenum layer until the Si3N4 layer is depleted from silicon target and then depositing a silicon layer on the second Si3N4 interface layer;
- repeating steps (b) through (d) to form a multilayer stack comprising a plurality of reflective layer pairs comprising 40 reflective layer pairs;
- forming a capping layer on the multilayer stack;
- and
- forming an absorber layer on the capping layer.
6 more elements
Dependencies are inferred from the claim text.