Silicon nitride phased array chip based on a suspended waveguide structure

A silicon nitride phased array chip based on a suspended waveguide structure, comprising:

• a silicon nitride waveguide area;
• and
• a suspended waveguide area;
• wherein the silicon nitride waveguide area comprises a silicon substrate, a silicon dioxide buffer layer, a silicon dioxide cladding layer and a silicon nitride waveguide-based core layer;
• the silicon nitride waveguide-based core layer comprises an optical splitter unit, a first curved waveguide, a thermo-optic phase shifter and a spot-size converter;
• the suspended waveguide area comprises a second curved waveguide and an array grating antenna;
• the optical splitter unit, the first curved waveguide, the thermo-optic phase shifter and the spot-size converter are arranged on the silicon dioxide buffer layer and in the silicon dioxide cladding layer;
• and
• a light beam with a wavelength of 1550 nm sequentially passes through the optical splitter unit, the first curved waveguide, the thermo-optic phase shifter, the spot-size converter, the second curved waveguide and the array grating antenna.