Magnetic sensor array with different RA TMR film

A tunnel magnetoresistive (TMR) sensor device, comprising:

• a first resistor comprising:
• a first pinned layer,
• a first free layer, and
• a first barrier layer between the first pinned layer and the first free layer, the first barrier layer having a first thickness within a range of 10 Angstroms to 20 Angstroms;
• and
• a second resistor comprising:
• a second pinned layer,
• a second free layer, and
• a second barrier layer between the second pinned layer and the second free layer, the second barrier layer having a second thickness within a range of 10.5 Angstroms to 20.5 Angstroms, wherein the second thickness is different from the first thickness such that the first resistor and the second resistor contain different resistance areas.

A tunnel magnetoresistive (TMR) sensor device, comprising:

• a first resistor comprising a first plurality of TMR structures that each have a first resistance area, each of the first plurality of TMR structures comprising:
• a first pinned layer,
• a first free layer, and
• a first barrier layer between the first pinned layer and the first free layer, the first barrier layer having a first thickness within a range of 10 Angstroms to 20 Angstroms;
• and
• a second resistor comprising a second plurality of TMR structures that each have a second resistance area, each of the second plurality of TMR structures comprising:
• a second pinned layer,
• a second free layer, and
• a second barrier layer between the second pinned layer and the second free layer, the second barrier layer having a second thickness within a range of 10.5 Angstroms to 20.5 Angstroms, wherein the second thickness is greater than the first thickness, and the first resistance area is greater than the second resistance area.