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US 11,598,746 B2Granted
Gas sensor
AssigneeKabushiki Kaisha Toshiba
InventorsYumi Hayashi, Akihiro Kojima, Hiroaki Yamazaki
Life of this patent
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Abstract
In one embodiment, a gas sensor includes a sensing layer having a first region containing PdCuSi, and a second region which is provided outside the first region and contains PdCu.
Claims19
A gas sensor comprising:
- a substrate;
- a sensing layer;
- a first electrode provided between the substrate and the sensing layer;
- a second electrode provided between the substrate and the first electrode;
- and
- the sensing layer comprising:
- a third region including SiOx;
- a first region including PdCuSi provided between the third region and the first electrode;
- second region including PdCu provided between the third region and the first region;
- and
- a cap film including at least one element selected from palladium (Pd), platinum (Pt), gold (Au), silicon (Si), phosphorus (P) and boron (B), and formed between the second region and the third region;
- wherein a capacitance between the first electrode and the second electrode changes according to the absorption of a gas in the sensing layer.
9 more elements
A gas sensor comprising:
- a substrate;
- a sensing layer;
- a first electrode provided between the substrate and the sensing layer;
- a second electrode provided between the substrate and the first electrode;
- and
- the sensing layer comprising:
- a third region including SiOx;
- a first region including PdCuSi provided between the third region and the first electrode;
- a second region including PdCu provided between the third region and the first region;
- and
- a film including at least one element selected from palladium (Pd), platinum (Pt), gold (Au), silicon (Si), phosphorus (P) and boron (B), and formed between the second region and the third region.
8 more elements
Dependencies are inferred from the claim text.