Electrochemical plating system and method of using

An electrochemical plating (ECP) system, comprising

• a plurality of ECP cells, each of the plurality of ECP cells comprising an anode, a substrate holder configured to hold a substrate to be electroplated in an ECP process, and a plating bath configured to hold a plating solution for the ECP process;
• a plurality of sensors, each of the plurality of sensors coupled to a corresponding ECP cell of the plurality of ECP cells and configured to in situ measure an interface resistance between a metal layer electroplated on the substrate and the plating solution during the ECP process;
• a plating solution supply system in fluid communication with the plurality of ECP cells and configured to supply the plating solution to each of the plurality of ECP cells;
• and
• a control system configured to:
• compare the interface resistance with a threshold resistance below which voids start to occur in conductive lines having the highest line-end density of a plurality of conductive lines in a metallization layer formed over the substrate, wherein the threshold resistance is determined by:
• receiving a layout data of an integrated circuit to be manufactured on the substrate;
• identifying the conductive lines having the highest line-end density in the metallization layer;
• and
• determining the threshold resistance using empirical data;
• and
• adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

An electrochemical plating (ECP) system, comprising

• a plating solution;
• an anode;
• a substrate holder for immersing at least a portion of a substrate into the plating solution during an ECP process;
• a power supply configured to provide an electrical current to the plating solution to thereby deposit a metal layer on the substrate;
• a sensor configured to in situ measure an interface resistance between the metal layer and the plating solution;
• and
• a control system, the control system comprising:
• a memory;
• and
• a processor configured to:
• compare the interface resistance with a threshold resistance that is associated with a subset of conductive lines having the highest line-end density of a plurality of conductive lines in a metallization layer of an integrated circuit to be manufactured on the substrate;
• and
• increase an amount of at least one organic additive in the plating solution in response to the interface resistance being below the threshold resistance.