Wafer support and thin-film deposition apparatus using the same

A thin-film deposition apparatus, comprising:

• a chamber comprising a containing space;
• a wafer support disposed within the containing space for supporting at least one wafer and comprising:
• at least one heating unit that comprises at least one heating coil for heating up the at least one wafer supported by the wafer support, wherein the at least one heating coil is disposed within the at least one heating unit;
• a conduct portion that is disposed above the at least one heating unit and electrically connected to a bias power source, wherein the bias power source is used to form a bias on the conduct portion;
• an electrically-insulating-and-heat-conducting unit, wherein the heating unit, the electrically-insulating-and-heat-conducting unit and the conduct portion have disk-shaped appearances, and the heating unit, the electrically-insulating-and-heat-conducting unit and the conduct portion are disposed in a stack-up manner, wherein the electrically-insulating-and-heat-conducting unit is positioned between the at least one heating unit and the conduct portion for insulating the conduct portion from the at least one heating unit, and the electrically-insulating-and-heat-conducting unit does not contact the at least one heating coil;
• a connecting seat supporting the at least one heating unit;
• a securing seat supporting the connecting seat, wherein a first annular-seal member is disposed between the connecting seat and the at least one heating unit, and a second annular-seal member is disposed between the securing seat and the connecting seat;
• and
• at least one cooling passage positioned between the at least one heating unit and the first annular-seal member, to separate the at least one heating unit and the first annular-seal member;
• and
• at least one gas inlet fluidly connected to the containing space of the chamber for transferring a process gas to the containing space.