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US 11,598,002 B2Granted
Thio(di)silanes
AssigneeDDP Specialty Electronic Materials US 9, LLC
InventorsNoel Mower Chang, Byung K. Hwang, Brian David Rekken, Vasgen Aram Shamamian, Xianghuai Wang, Xiaobing Zhou
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Abstract
A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.
Claims16
A method of forming a silicon-containing film on a substrate, the method comprising:
- heating a thiodisilane according to formula (I)
- (R1aR1bR1cCS)S(R22N)n(Si-Si)XXHh (I),
- wherein:
- subscript s is an integer from 1 to 6;
- subscript n is an integer from 0 to 5;
- subscript x is an integer from 0 to 5;
- subscript h is an integer from 0 to 5;
- with the proviso that sum s+n+x+h=6;
- each H, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);
- each X is a monovalent halogen atom F, Cl, I, or Br and, when present in formula (I), is independently bonded to the same or different one of the silicon atoms in formula (I);
- wherein R1a, R1b, and R1c are defined by limitation (a), (b), or (c):
- (a) at least one R1a independently is (C1-C20)alkyl or phenyl and each of any remaining R1a, R1b, and R1c independently is H or (C1-C20)hydrocarbyl;
- or
- (b) there is at least one group R1aR1bR1cC that independently is a substituted or unsubstituted (C6-C20)aryl, and each of any remaining R1a, R1b, and R1c independently is H or (C1-C20)hydrocarbyl;
- or
- (c) any two of R1a, R1b, and R1c (collectively R1 groups), in the same or different R1aR1bR1cC group, are bonded together to form a divalent group, —R11—, wherein —R11— is a CH2 or a (C3-C20)hydrocarbylene and each of any remaining R1a, R1b, and R1c independently is H or (C1-C20)hydrocarbyl;
- each R2 group independently is H or a (C1-C20)hydrocarbyl;
- or any two R2 groups may be bonded together to form a divalent group, —R22—, wherein —R22— is a (C2-C20)hydrocarbylene and each of any remaining R2 groups independently is H or a (C1-C20)hydrocarbyl;
- each hydrocarbyl and hydrocarbylene independently is unsubstituted or substituted with from 1 to 5 substituents SUB;
- and
- each SUB independently is unsubstituted (C1-C6)alkyl, unsubstituted (C3-C6)cycloalkyl, unsubstituted (C2-C6)alkenyl, unsubstituted (C2-C6)alkynyl, unsubstituted (C6-C7)aryl, fluoro, chloro, or bromo,
- in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give the silicon-containing film disposed on the substrate.
19 more elements
A method of forming a film on a substrate, the method comprising:
- heating a thiosilane according to formula (A)
- (R1aR1bR1cCS)S(si)xXHh (A),
- wherein:
- subscript s is an integer from 1 to 4;
- subscript x is an integer from 0 to 3;
- subscript h is an integer from 0 to 3;
- with the proviso that sum s+x+h=4;
- each X is a monovalent halogen atom F, Cl, or Br;
- wherein R1a, R1b, and R1c are defined by limitation (a), (b), or (c):
- (a) R1a is (C1-C6)alkyl, R1b is (C2-C6)alkyl or H, and R1c is H;
- or (b) each of R1a, R1b, and R1c independently is (C1-C6)alkyl;
- or (c) R1aR1bR1cC together represents a substituted or unsubstitued phenyl group, wherein the substitute groups on the phenyl are one or more methyl groups;
- each alkyl independently is unsubstituted or substituted with from 1 to 5 substituents SUB;
- and
- each SUB independently is unsubstituted (C1-C6)alkyl, unsubstituted (C3-C6)cycloalkyl, unsubstituted (C2-C6)alkenyl, unsubstituted (C2-C6)alkynyl, unsubstituted (C6-C7)aryl, fluoro, chloro, or bromo,
- in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate.
13 more elements
A method of depositing a silicon-containing film on a substrate, the method comprising:
- heating a co-reactant and a thio(di)silane in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate;
- wherein the thio(di)silane is a thiodisilane selected from the group consisting of:
- methylthio-disilane;
- 1,2-Bis(phenylthio)-disilane;
- 1,4-Dithia-2,3-disilacyclohexane;
- 2,2,3,3,-Tetramethyl-1,4-dithia-2,3-disilacyclohexane;
- 2,3-Dihydro-2,2,3,3,-tetramethyl-1,4,2,3-benzodithiadisilane;
- 1,1,2,2-Tetramethyl-1,2-bis(methylthio)-disilane;
- 1,1,2,2-Tetramethyl-1,2-bis(ethylthio)-disilane;
- 1,1,2,2-Tetramethyl-1,2-bis(propylthio)-disilane;
- 1,1,2,2-Tetramethyl-1,2-bis(butylthio)-disilane;
- 1-Chloro-,1,2,2-trimethyl-1,2-bis(butylthio)-disilane;
- 1,2-Bis(butylthio)-1,2-dichloro-1,2-dimethyl-disilane;
- 1,2-Bis [(1,1-dimethylethyl)thio]-1,1,2,2-tetramethyl-disilane;
- 1,2-Dichloro-1,2-bis [(1,1-dimethylethyl)thio]-1,2-dimethyl-disilane;
- Dihydro-2,2,4,6,6,8-hexamethyl-[1,4,2,3]dithiadisilolo[2,3-b][1,4,2,3]dithiadisilole, and combinations thereof.
13 more elements
A method of depositing a silicon-containing film on a substrate, the method comprising:
- heating a co-reactant and a thiosilane in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate;
- wherein the thiosilane is selected from the group consisting of:
- Tri(methylthio)silane;
- Tri(ethylthio)silane;
- Tri(propylthio)silane;
- Tri(1-methylethylthio)silane;
- Trichloro-(ethylthio)silane;
- Trichloro-(butylthio)silane;
- Trichloro-(1,1-dimethylethylthio)silane;
- Dichloro-di(ethylthio)silane;
- Dichloro-di(butylthio)silane;
- Dichloro-di(1,1-dimethylethylthio)silane;
- Chloro-tri(methylthio)silane;
- Chloro-tri(ethylthio)silane;
- Chloro-tri(propylthio)silane;
- Chloro-tri(1-methylethylthio)silane;
- Tetra(methylthio)silane;
- Tetra(ethylthio)silane;
- Tetra(propylthio)silane;
- Tetra(1-methylethylthio)silane, and combinations thereof.
17 more elements
Dependencies are inferred from the claim text.