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US 11,596,153 B2Granted
Metal-semiconductor-metal plasmonic device and absorber and method for making the same
AssigneeBoard of Supervisors of Louisiana State University and Agricultural and Mechanical College
InventorKevin Michael McPeak
Life of this patent
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Abstract
A metal-semiconductor-metal (MSM) plasmonic device includes a substrate; a metal layer deposited on the substrate, the metal layer being substantially reflective in at least the visible wavelength range; an oxide layer deposited on the metal layer; and gold or gold alloy nanoparticles deposited on the oxide layer.
Claims18
A metal-semiconductor-metal (MSM) plasmonic device comprising:
- a substrate;
- a metal layer deposited on the substrate, the metal layer being substantially reflective in at least the visible wavelength range;
- an oxide layer deposited on the metal layer;
- and
- gold or gold-alloy nanoparticles deposited on a surface of the oxide layer,
- wherein the gold or gold-alloy nanoparticles are spaced apart from the metal layer by a thickness of the oxide layer on the surface of which the gold or gold-alloy nanoparticles are deposited, and
- wherein the oxide layer is an oxide doped layer and the oxide layer is doped with a dopant selected from the group consisting of Al, Ga, F, and Mg, wherein the dopant replaces an oxygen atom at various locations within a lattice of the oxide layer to adjust band positions of the oxide layer to facilitate carrier injection and to improve chemical resistance.
4 more elements
Dependencies are inferred from the claim text.