Photoresist composition, its manufacturing method, and manufacturing methods of metal pattern and array substrate
AssigneesHefei Xinsheng Optoelectronics Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsWei Li, Guangcai Yuan, Bin Zhou, Dongfang Wang, Jun Cheng, Yingbin Hu, Jingjing Xia, Tongshang Su
Life of this patent
Estimating the term…
Abstract
A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.
Claims13
A photoresist composition, comprising a base material and an ion adsorbent, wherein the ion adsorbent is a chelating resin, the chelating resin comprises any one or any combination of polyacrylic ethylenediimine diacetic acid chelating resin, poly (4-glycine-methylene styrene) chelating resin, poly (2-hydroxyl-3-mercaptopropyl acrylate) chelating resin, and poly (6-vinyl-8-hydroxyquinoline) chelating resin, the base material comprises a film-forming resin, a photosensitizer, and an organic solvent, and wherein in a case that the photoresist composition is a positive photoresist composition, the film-forming resin is reacted with the photosensitizer, the film-forming resin comprises any one or any combination of a phenolic resin, a silicone resin, and a polyimide, and the photosensitizer is a diazonaphthoquinone-based photosensitizer, or in a case that the photoresist composition is a negative photoresist composition, the film-forming resin comprises a copolymer of an organic ester monomer, an organic acid monomer, monomer, and a polymerizable monomer, and the photosensitizer comprises any one or any combination of nitroaniline, anthraquinone, benzophenone, and N-acetyl-4-nitronaphthylamine, and
- wherein the chelating resin is configured to carry out coordination reaction with at least one of Ni2−, Zn2−, Al3−, Cr2−, Pb2−, and Mo3−to form a chelate with a stable structure, and the chelate is evenly dispersed in the base material.
A manufacturing method of a photoresist composition, comprising:
- mixing a base material and an ion adsorbent, wherein the ion adsorbent is a chelating resin, the chelating resin comprises any one or any combination of polyacrylic ethylenediimine diacetic acid chelating resin, poly (4-glycine-methylene styrene) chelating resin, poly (2-hydroxyl-3 -mercaptopropyl acrylate) chelating resin, and poly (6-vinyl-8-hydroxyquinoline) the base material comprises a film-forming resin, a photosensitizer, and an organic solvent, and wherein in a case that the photoresist composition is a positive photoresist composition, the film-forming resin is reacted with the photosensitizer, the film-forming resin comprises any one or any combination of a phenolic resin, a silicone resin, and a polyimide, and the photosensitizer is a diazonaphthoquinone-based photosensitizer, or in a case that the photoresist composition is a negative photoresist composition, the film-forming resin comprises a copolymer of an organic ester monomer, an organic acid monomer, and a polymerizable monomer, and the photosensitizer comprises any one or any combination of nitroaniline, anthraquinone, benzophenone, and N-acetyl-4-nitronaphthylamine, and
- wherein the chelating resin is configured to carry out coordination reaction with at least one of Ni2−, Zn2−, Al3−, Cr2−, Pb2−, and Mo3−to form a chelate with a stable structure, and the chelate is evenly dispersed in the base material.
Dependencies are inferred from the claim text.