Ultrasound transducer devices and methods for fabricating ultrasound transducer devices

A method of fabricating an ultrasound transducer device, comprising:

• forming first, second, and third insulating layers on a first integrated circuit substrate, with a first cavity in the second insulating layer;
• and
• bonding a second substrate to the first integrated circuit substrate to seal the first cavity, wherein
• the first insulating layer is formed on the third insulating layer.

A method of fabricating an ultrasound transducer device, comprising:

• forming first and second insulating layers on a first integrated circuit substrate, with a first cavity in the second insulating layer;
• bonding a second substrate to the first integrated circuit substrate to seal the first cavity;
• and
• forming a through-silicon via (TSV) in the first integrated circuit substrate using a TSV-Middle process prior to forming the first and second insulating layers.

A method of fabricating an ultrasound transducer device, comprising:

• forming first and second insulating layers on a first integrated circuit substrate, with a first cavity in the second insulating layer;
• bonding a second substrate to the first integrated circuit substrate to seal the first cavity;
• and
• forming a through-silicon via (TSV) in the first integrated circuit substrate using a TSV-Last process subsequent to bonding the second substrate to the first integrated circuit substrate.