Vertical-cavity surface-emitting laser fabrication on large wafer

A method for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer, the method comprising:

• forming a first reflector form on the wafer by forming a first reflector layer on the wafer;
• bonding an un-patterned epi layer form onto the first reflector form, the un-patterned epi layer form comprising a plurality of un-patterned epitaxially grown layers on a first substrate;
• removing the first substrate to form a bonded blank, wherein the bonded blank is substantially non-varying in an xy plane, the xy plane being normal to an intended emission direction of the VCSELs;
• performing a first regrowth to form first regrowth layers on the un-patterned epitaxially grown layers;
• patterning at least a portion of the first regrowth layers to form a tunnel junction pattern;
• performing a second regrowth to form second regrowth layers;
• bonding a second reflector form onto the second regrowth layers and removing a second substrate, the second reflector form comprising a second reflector layer and the second substrate;
• and
• performing a dicing operation to form individual VCSELs.

A method for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer, the method comprising:

• forming a first reflector form on the wafer by forming a first reflector layer on the wafer;
• bonding an un-patterned epi layer form onto the first reflector form, the un-patterned epi layer form comprising a plurality of un-patterned epitaxially grown layers on a first substrate;
• removing the first substrate to form a bonded blank, wherein the bonded blank consists of un-patterned layers;
• performing a first regrowth to form first regrowth layers on the un-patterned epitaxially grown layers;
• patterning at least a portion of the first regrowth layers to form a tunnel junction pattern;
• performing a second regrowth to form second regrowth layers;
• bonding a second reflector form onto the second regrowth layers, the second reflector form comprising a second reflector layer and a second substrate;
• and
• performing a dicing operation to form individual VCSELs.