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US 11,588,012 B2Granted
Semiconductor devices and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-goo Kang, Sang-yeol Kang, Youn-soo Kim, Jin-su Lee, Hyung-suk Jung, Kyu-ho Cho
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.
Claims20
A semiconductor device comprising:
- a substrate:
- a lower insulating layer disposed on the substrate and including a through hole;
- a contact structure disposed in the through hole of the lower insulating layer;
- an upper insulating layer disposed on the lower insulating layer;
- a lower electrode structure passing through the upper insulating layer and contacting the contact structure, the lower electrode structure including a first lower electrode and a second lower electrode that is disposed on the first lower electrode;
- a dielectric layer disposed on the lower electrode structure;
- and
- an upper electrode disposed on the dielectric layer,
- wherein the first lower electrode of the lower electrode structure includes niobium oxide,
- the second lower electrode of the lower electrode structure includes niobium nitride, and is disposed on an inner side surface and an inner bottom surface of the first lower electrode,
- the dielectric layer includes hafnium oxide, and is disposed on an inner side surface and an inner bottom surface of the second lower electrode of the lower electrode structure and on an outer side surface of the first lower electrode of the lower electrode structure, and
- the dielectric layer contacts a top surface of the first lower electrode of the lower electrode structure and a top surface of the second lower electrode of the lower electrode structure.
9 more elements
A semiconductor device comprising:
- a substrate;
- a lower insulating layer disposed on the substrate and including a through hole;
- a contact structure disposed in the through hole of the lower insulating layer;
- an upper insulating layer disposed on the lower insulating layer;
- a lower electrode structure passing through the upper insulating layer and contacting the contact structure, the lower electrode structure including a first lower electrode and a second lower electrode, the first lower electrode including a bottom portion and a side portion that is disposed on the bottom portion;
- a dielectric layer disposed on the lower electrode structure;
- and
- an upper electrode disposed on the dielectric layer,
- wherein the second lower electrode of the lower electrode structure is disposed on a top surface of the bottom portion of the first lower electrode, an inner side surface of the side portion of the first lower electrode, an outer side surface of the side portion of the first lower electrode and a top surface of the side portion of the first lower electrode, and
- the dielectric layer is disposed on the second lower electrode of the lower electrode structure and does not contact the first lower electrode of the lower electrode structure.
7 more elements
A semiconductor device comprising:
- a substrate;
- a lower insulating layer disposed on the substrate and including a through hole;
- a contact structure disposed in the through hole of the lower insulating layer;
- an upper insulating layer disposed on the lower insulating layer;
- a lower electrode structure disposed on the upper insulating layer, and including a first lower electrode, a second lower electrode and a third lower electrode;
- a supporter disposed on the upper insulating layer;
- a dielectric layer disposed on the lower electrode structure;
- and
- an upper electrode disposed on the dielectric layer,
- wherein the first lower electrode of the lower electrode structure is cylinder-shaped with a filled interior,
- the first lower electrode of the lower electrode structure passes through the upper insulating layer and contacts a top surface of the contact structure,
- the second lower electrode of the lower electrode structure is disposed on a side surface and a top surface of the first lower electrode of the lower electrode structure,
- the third lower electrode of the lower electrode structure is disposed on a side surface and a top surface of the second lower electrode of the lower electrode structure,
- the dielectric layer is disposed on a side surface and a top surface of the third lower electrode of the lower electrode structure, and contacts the supporter and the upper insulating layer, and
- the dielectric layer does not contact the first lower electrode and the second lower electrode of the lower electrode structure.
12 more elements
Dependencies are inferred from the claim text.