Zinc-cobalt barrier for interface in solder bond applications
AssigneeTexas Instruments Incorporated
InventorsNazila Dadvand, Christopher Daniel Manack, Salvatore Frank Pavone
Life of this patent
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Abstract
A microelectronic device has bump bond structures on input/output (I/O) pads. The bump bond structures include copper-containing pillars, a barrier layer including cobalt and zinc on the copper-containing pillars, and tin-containing solder on the barrier layer. The barrier layer includes 0.1 weight percent to 50 weight percent cobalt and an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick. A lead frame has a copper-containing member with a similar barrier layer in an area for a solder joint. Methods of forming the microelectronic device are disclosed.
Claims17
A method of forming a microelectronic device, comprising:
- providing a substrate having an input/output (I/O) pad;
- forming a copper-containing structure an input/output (I/O) pad of a substrate;
- forming a layer on the copper-containing structure, wherein the layer includes 0.1 weight percent to 50 weight percent cobalt, and wherein the layer includes an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick;
- and
- forming solder on the layer, so that the solder includes tin.
A method of forming a microelectronic device, comprising:
- providing a substrate having an input/output (I/O) pad;
- forming a copper-containing pillar, so that the copper-containing pillar includes at least 90 weight percent copper;
- forming a barrier layer on the copper-containing pillar, so that the barrier layer includes 0.1 weight percent to 50 weight percent cobalt, and so that the barrier layer includes an amount of zinc equivalent to a layer of pure zinc 0.05 microns to 0.5 microns thick;
- and
- forming solder on the barrier layer, so that the solder includes tin.
Dependencies are inferred from the claim text.