Semiconductor laser diode

A semiconductor laser diode comprising:

• a first resonator;
• a second resonator;
• a first side surface forming a light-outcoupling surface;
• and
• an outcoupling mirror layer located on the first side surface,
• wherein the first and second resonators have parallel resonator directions along a longitudinal direction and are monolithically integrated into the semiconductor laser diode,
• wherein the first resonator comprises at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped and to generate a first light,
• wherein the longitudinal direction is parallel to a main extension plane of the active layer and perpendicular to a growth direction of the semiconductor layer sequence,
• wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to generate a second light partially emitted outwards from the second resonator,
• wherein the first and second resonators are optically and mechanically coupled to each other along a surface perpendicular to the light-outcoupling surface by an at least partially transparent connecting layer which is dichroic and which is at least partially transparent to the first light and opaque to the second light,
• wherein the first side surface is perpendicular to the longitudinal direction, and
• wherein the connecting layer is configured for a wafer bonding of the first resonator with the second resonator.

A semiconductor laser diode comprising:

• a first resonator;
• a second resonator;
• a first side surface forming a light-outcoupling surface;
• and
• an outcoupling mirror layer located on the first side surface,
• wherein the first and second resonators have parallel resonator directions along a longitudinal direction and are monolithically integrated into the semiconductor laser diode,
• wherein the first resonator comprises at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped and to generate a first light,
• wherein the longitudinal direction is parallel to a main extension plane of the active layer and perpendicular to a growth direction of the semiconductor layer sequence, and a lateral direction is perpendicular to the longitudinal direction and the growth direction,
• wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to generate a second light which is partially emitted outwards from the second resonator,
• wherein the first and second resonators are optically and mechanically coupled to each other along a surface perpendicular to the light-outcoupling surface by an at least partially transparent connecting layer which is dichroic and which is at least partially transparent to the first light and opaque to the second light,
• wherein a main extension plane of the connecting layer extends in the longitudinal and lateral directions, and
• wherein the first side surface extends in the lateral and growth directions.