# US 11,570,899 B2 · Circuit board and production method therefor, and electronic device and production method therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,570,899 B2 - Document ID: US11570899B2 - Status: Granted - Kind: B2 - Application number: 17/255,606 - Filed: 2019-06-28 - Published: 2021-08-26 - Granted: 2023-01-31 - Earliest claimed: 2018-06-29 - Assignees: Material Concept, Inc. - Applicants: Material Concept, Inc. - Inventors: Junichi Koike - Web page: https://patentgrep.com/patent/US11570899B2 ## CPC - H05K 1/189: characterised by the use of flexible or folded printed circuits - H05K 3/388: {by the use of a metallic or inorganic thin film adhesion layer} - H05K 1/0313: {Organic insulating material} - H10W 70/69: Insulating materials thereof - H05K 1/0393: {Flexible materials (H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups)} - H05K 1/092: {Dispersed materials, e.g. conductive pastes or inks} - H05K 3/246: {Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating} - H05K 2201/0769: Anti metal-migration, e.g. avoiding tin whisker growth - H05K 2201/10287: Metal wires as connectors or conductors - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A circuit board that has flexibility owing to an organic insulating layer and that still has high adhesion between metal wiring and the organic insulating layer; and a method for producing the circuit board without employing photolithography. The circuit board comprising a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein: in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked; in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked; the metal wiring is made of a first metal element; and the first diffusion layer contains the first metal element and a second metal element. ## Claims ### Claim 1 A circuit board comprising: a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of the second metal element, the second diffusion layer includes the second metal element, and the second metal element has a stronger oxide-forming tendency than that of the first metal element. ### Claim 2 A circuit board comprising: a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of the second metal element, the second diffusion layer includes the second metal element, the first metal element is one or more elements selected from the group consisting of Cu, Ag, and Ni, and the second metal element is one or more elements selected from the group consisting of Mn, Cr, V, Nb, Ta, Ti, and Zr. ### Claim 3 A circuit board comprising: a metal wiring arrangement portion and a metal wiring non-arrangement portion, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, an average thickness of the first diffusion layer is greater than an average thickness of the second diffusion layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of the second metal element, the second diffusion layer includes the second metal element, and the second metal element has a stronger oxide-forming tendency than that of the first metal element. ### Claim 4 (depends on 3) The circuit board according to claim 3, wherein the first metal element is one or more elements selected from the group consisting of Cu, Ag, and Ni, and the second metal element is one or more elements selected from the group consisting of Mn, Cr, V, Nb, Ta, Ti, and Zr. ### Claim 5 (depends on 1) The circuit board according to claim 1, wherein an average thickness of the first diffusion layer with respect to an average thickness of the second diffusion layer (the average thickness of the first diffusion layer/the average thickness of the second diffusion layer) is equal to or greater than five times and equal to or less than 500 times. ### Claim 6 (depends on 1) The circuit board according to claim 1, wherein the metal wiring has a porous structure. ### Claim 7 (depends on 6) The circuit board according to claim 6, wherein the metal wiring includes metal plating made of one or more elements selected from the group consisting of Cu, Ag, and Ni in a void in the porous structure. ### Claim 8 (depends on 6) The circuit board according to claim 6, wherein the metal wiring includes thermosetting resin in a void in the porous structure. ### Claim 9 An electronic device comprising: a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of a second metal element, the second diffusion layer includes the second metal element, the second metal element has a stronger oxide-forming tendency than that of the first metal element, and the at least one electronic component is connected to the metal wiring. ### Claim 10 An electronic device comprising: a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of the second metal element, the second diffusion layer includes the second metal element, the first metal element is one or more elements selected from the group consisting of Cu, Ag, and Ni, the second metal element is one or more elements selected from the group consisting of Mn, Cr, V, Nb, Ta, Ti, and Zr, and the at least one electronic component is connected to the metal wiring. ### Claim 11 An electronic device comprising: a metal wiring arrangement portion, a metal wiring non-arrangement portion, and at least one electronic component selected from a passive component and an active component, wherein, in the metal wiring arrangement portion, metal wiring, a first diffusion layer, and a first organic insulating layer are stacked with each other, and the metal wiring and the first organic insulating layer are disposed at each end in a stacking direction of the metal wiring and the first organic insulating layer, in the metal wiring non-arrangement portion, a metal oxide layer, a second diffusion layer, and a second organic insulating layer are stacked with each other, and the metal oxide layer and the second organic insulating layer are disposed at each end in a stacking direction of the metal oxide layer and the second organic insulating layer, an average thickness of the first diffusion layer is greater than an average thickness of the second diffusion layer, the metal wiring includes a first metal element, the first diffusion layer includes the first metal element and a second metal element, the metal oxide layer includes an oxide of the second metal element, the second diffusion layer includes the second metal element, the second metal element has a stronger oxide-forming tendency than that of the first metal element, and the at least one electronic component is connected to the metal wiring. ### Claim 12 (depends on 9) The electronic device according to claim 9, wherein the metal wiring and the at least one electronic component are joined to each other by solder alloy, and the solder alloy is present in a void in the metal wiring.