Oxidation inhibiting gas in a manufacturing system

A non-transitory machine-readable storage medium storing instructions which, when executed, cause a processing device to perform operations comprising:

• flowing gas comprising an oxidation inhibiting gas into a chamber of a semiconductor processing system, wherein the chamber comprises one or more of a factory interface of the semiconductor processing system or an adjacent chamber that is mounted to the factory interface, wherein the flowing of the gas comprises recirculating existing gas from the chamber back into the chamber;
• receiving, via one or more sensors coupled to the chamber, sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber;
• determining, based on the sensor data, whether to perform an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber;
• and
• responsive to determining to perform the adjustment, causing the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber, wherein the causing of the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber comprises changing a first rate of non-recirculated oxidation inhibiting gas entering the chamber.

A semiconductor processing system comprising:

• a chamber comprising an oxidation inhibiting gas inlet configured to receive a flow of gas comprising an oxidation inhibiting gas into the chamber, wherein the chamber comprises one or more of a factory interface or an adjacent chamber that is mounted to the factory interface, and wherein the flow of the gas comprises recirculated existing gas from the chamber;
• one or more sensors coupled to the chamber, wherein the one or more sensors are configured to provide sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber;
• and
• a processing device to cause, based on the sensor data, an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber, wherein the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber comprises changing a first rate of non-recirculated oxidation inhibiting gas entering the chamber.