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US 11,563,172 B2Granted
Variable resistance memory device and manufacturing method of the same
AssigneeSK hynix Inc.
InventorJae Hyun Han
Life of this patent
Estimating the term…
Abstract
There are provided a variable resistance memory device and a manufacturing method of the same. The variable resistance memory device includes: a first electrode; a second electrode arranged in a vertical direction from the first electrode; and an oxide layer having an oxygen deficient region extending in the vertical direction between the second electrode and the first electrode.
Claims12
A variable resistance memory device comprising:
- a first electrode;
- a second electrode arranged in a vertical direction from the first electrode;
- and
- a memory cell disposed between the first electrode and the second electrode, the memory cell having a varying resistance according to a distribution density of oxygen vacancies in the memory cell,
- wherein the memory cell includes an oxide layer having a first oxygen deficient region extending in the vertical direction between the second electrode and the first electrode,
- wherein the distribution density of the oxygen vacancies in the memory cell is disposed in the first oxygen deficient region, and
- wherein the oxide layer further includes a first region and a second region that extend in the vertical direction from a top of the first electrode, the first oxygen deficient region disposed between the first region and the second region.
4 more elements
A variable resistance memory device comprising:
- a first electrode;
- a second electrode arranged in a vertical direction from the first electrode;
- a memory cell disposed between the first electrode and the second electrode, the memory cell having a varying resistance according to a distribution density of oxygen vacancies in the memory cell, wherein the memory cell includes an oxide layer having a first oxygen deficient region extending in the vertical direction between the second electrode and the first electrode, and wherein the distribution density of the oxygen vacancies in the memory cell is disposed in the first oxygen deficient region;
- and
- a core insulating layer disposed between the first electrode and the second electrode, wherein the oxide layer surrounds a sidewall of the core insulating layer,
- wherein the oxide layer further includes:
- a first region surrounding the first oxygen deficient region;
- and
- a second region disposed between the core insulating layer and the first oxygen deficient region.
6 more elements
A variable resistance memory device comprising:
- a first electrode;
- a second electrode arranged in a vertical direction from the first electrode;
- a memory cell disposed between the first electrode and the second electrode, the memory cell having a varying resistance according to a distribution density of oxygen vacancies in the memory cell, wherein the memory cell includes an oxide layer having a first oxygen deficient region extending in the vertical direction between the second electrode and the first electrode, and wherein the distribution density of the oxygen vacancies in the memory cell is disposed in the first oxygen deficient region;
- and
- a core insulating layer disposed between the first electrode and the second electrode, wherein the oxide layer surrounds a sidewall of the core insulating layer,
- wherein the oxide layer further includes:
- a second oxygen deficient region disposed between the first oxygen deficient region and the core insulating layer;
- a first region surrounding the first oxygen deficient region;
- a second region between the first oxygen deficient region and the second oxygen deficient region;
- and
- a third region between the core insulating layer and the second oxygen deficient region.
8 more elements
Dependencies are inferred from the claim text.