Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

A method for forming a semiconductor device, comprising:

• forming a plurality of first semiconductor structures on a first wafer, wherein at least one of the first semiconductor structures comprises a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer comprising a plurality of first bonding contacts;
• dicing the first wafer into a plurality of first dies, such that at least one of the first dies comprises the at least one of the first semiconductor structures;
• forming a plurality of second semiconductor structures on a second wafer, wherein at least one of the second semiconductor structures comprises an array of dynamic random-access memory (DRAM) cells and a second bonding layer comprising a plurality of second bonding contacts;
• dicing the second wafer into a plurality of second dies, such that at least one of the second dies comprises the at least one of the second semiconductor structures;
• and
• bonding the first die and the second die in a face-to-face manner, such that the first semiconductor structure is bonded to the second semiconductor structure, wherein the first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure at a bonding interface,
• wherein the at least one of the first semiconductor structures further comprises a peripheral circuit comprising an input/output buffer, a decoder, and a sense amplifier configured to facilitate operations of the array of DRAM cells in the at least one of the second semiconductor structures.