3D stackable bidirectional access device for memory array
AssigneeInternational Business Machines Corporation
InventorsFabio Carta, Matthew Joseph BrightSky
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Abstract
A method of manufacturing a vertical metal-semiconductor field-effect transistor (MESFET) device is provided. The method includes forming a first oxide layer, forming a first electrode in the oxide layer, forming a crystallized silicon layer on the first electrode, forming a second electrode on the first oxide layer and on sidewalls of the crystalized silicon layer, forming a second oxide layer on upper surfaces of the second electrode. The method also includes forming a third electrode on an upper surface of the crystallized silicon layer.
Claims19
A method of manufacturing a vertical metal-semiconductor field-effect transistor (MESFET) device, the method comprising:
- forming a first oxide layer;
- forming a first electrode in the first oxide layer;
- forming a crystallized silicon layer directly contacting the first electrode;
- forming a second electrode on the first oxide layer and on sidewalls of the crystallized silicon layer;
- forming a second oxide layer on upper surfaces of the second electrode;
- and
- forming a third electrode on an upper surface of the crystallized silicon layer.
A vertical MESFET device comprising:
- a first oxide layer;
- a first electrode formed in the first oxide layer;
- a crystallized silicon layer directly contacting the first electrode;
- a second electrode formed on the first oxide layer and on sidewalls of the crystallized silicon layer;
- a second oxide layer formed on upper surfaces of the second electrode;
- and
- a third electrode formed on an upper surface of the crystallized silicon layer.
A semiconductor device comprising:
- a bidirectional access device that is a vertical MESFET device, the bidirectional access device including
- a first oxide layer,
- a first electrode formed in the first oxide layer,
- a crystallized silicon layer directly contacting the first electrode,
- a second electrode formed on the first oxide layer and on sidewalls of the crystallized silicon layer,
- a second oxide layer formed on upper surfaces of the second electrode, and
- a third electrode formed on an upper surface of the crystallized silicon layer;
- and
- a memory device connected to the bidirectional access device.
Dependencies are inferred from the claim text.