Systems and methods for integrating a-axis oriented barium titanate thin films on silicon (001) via strain control

A wafer comprising:

• a substrate;
• a relaxed layer of barium stannate formed on the substrate;
• and
• a strained a-axis oriented barium titanate (BTO) film formed on the layer of barium stannate,
• wherein a short, a-axis for BTO crystals in the film are normal to a plane defined by a surface of the substrate in contact with the relaxed layer, and
• wherein a long, c-axis for BTO crystals in the film are:
• parallel to the plane, and
• in a direction defined by a substrate flat of the substrate.

A method comprising:

• forming a Zintl template on a silicon substrate;
• growing a seed layer of strontium titanate (STO) on the silicon substrate;
• growing a strain control layer on the seed layer;
• and
• growing a layer of a-axis oriented barium titanate (BTO) on the strain control layer.