Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device

A quantum dot structure comprising:

• an active region configured to emit radiation;
• a barrier region surrounding the active region;
• and
• a trap region spaced apart from the active region,
• wherein, on both sides of the trap region, the trap region directly adjoins a material that has a larger band gap than the trap region,
• wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier,
• wherein a distance between the active region and the trap region is at least 10 nm,
• wherein the barrier region is thicker than the trap region, and
• wherein a conduction band edge of the barrier region continuously increases from the active region to the trap region and/or a valence band edge of the barrier region continuously decreases from the active region to the trap region.