Semiconductor device with metal film, power conversion device with the semiconductor device, and method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device, the semiconductor device comprising

• a substrate,
• a semiconductor element arranged on the substrate,
• a plate-like member electrically connected to the semiconductor element,
• a first electrode formed on the semiconductor element and joined to the plate-like member with solder,
• a second electrode formed on the semiconductor element and spaced from the first electrode, and
• a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member,
• the method comprising:
• a protective film forming step of forming a protective film on the semiconductor element, the protective film having openings at positions corresponding to positions where the first electrode, the second electrode and the metal film are to be formed;
• a metal film forming step of forming a film of metal capable of forming an alloy with the solder in the openings with the protective film as a mask, to form the first electrode, the second electrode and the metal film;
• a solder-joining step of arranging the solder and the plate-like member on the first electrode, and heating the solder to join the first electrode to the plate-like member;
• and
• a wiring step of joining a wire onto the second electrode.