Microwave dielectric component and manufacturing method thereof
AssigneeRichview Electronics Co., Ltd.
InventorsZhijian Wang, Honglin Song, Xianglan Wu, Siping Bai
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Abstract
A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.
Claims42
A microwave dielectric component, comprising:
- a microwave dielectric substrate;
- and
- a metal layer bonded to a surface of the microwave dielectric substrate;
- wherein the metal layer comprises a conductive seed layer and a metal thickening layer, the conductive seed layer comprises an ion implantation layer implanted into the surface of the microwave dielectric substrate and a plasma deposition layer attached to the ion implantation layer, and the metal thickening layer is attached to the plasma deposition layer.
A method for manufacturing a microwave dielectric component, comprising:
- Step S1:
- providing a microwave dielectric substrate;
- Step S2:
- performing ion implantation and plasma deposition on a surface of the microwave dielectric substrate to form a microwave dielectric substrate with a conductive seed layer, wherein the conductive seed layer comprises an ion implantation layer implanted into the surface of the microwave dielectric substrate and a plasma deposition layer attached to the ion implantation layer;
- Step S3:
- thickening the microwave dielectric substrate with the conductive seed layer by metal plating to form a microwave dielectric substrate with a metal thickening layer, wherein the metal thickening layer is attached to the plasma deposition layer and constitutes a metal layer with the conductive seed layer;
- and
- Step S4:
- forming a microwave dielectric component.
Dependencies are inferred from the claim text.