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US 11,552,452 B2Granted
Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction
AssigneeThe Regents of the University of California
InventorsPo Shan Hsu, Kathryn M. Kelchner, Robert M. Farrell, Daniel A. Haeger, Hiroaki Ohta, Anurag Tyagi, Shuji Nakamura, Steven P. DenBaars, James S. Speck
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Abstract
An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.
Claims21
A device, comprising:
- a semi-polar III-Nitride layer epitaxially grown on a semi-polar crystal plane of GaN having an inclination angle x degrees with respect to the c-plane, wherein 80°≤x<88.5° and the semi-polar III-Nitride layer has a surface roughness of 0.75 nanometers or less, as grown.
A method of fabricating a device, comprising:
- epitaxially growing a semi-polar III-Nitride layer on a semi-polar crystal plane of GaN having an inclination angle x degrees with respect to the c-plane, wherein 80°≤x<88.5° and the semi-polar III-Nitride layer has a surface roughness of 0.75 nanometers or less, as grown.
A device, comprising:
- a semi-polar III-Nitride layer epitaxially grown on a semi-polar crystal plane of GaN having an inclination angle between 80 and 90 degrees with respect to the c-plane, wherein the semi-polar III-Nitride layer comprise a layer having a thickness greater than or equal to a critical thickness for such layer deposited on a {11-22} crystal plane of GaN.
Dependencies are inferred from the claim text.