US 11,552,186 B2 · Inverter based on electron interference

Abstract

Semiconductor devices includes third arms. A channel from the first and second arms extends to a channel of the third arm. When a current from a first voltage is flowing from the first arm to the second arm, a flow of ballistic electrons is generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel. A fin structure located in the third arm channel and includes a gate. The gate is controlled using a second voltage over the fin structure, the fin structure is formed to induce an energy-field structure that shifts by an amount of the second voltage to control an opening of the gate that the flow of ballistic electrons pass through, which in turn changes a depletion width, subjecting the ballistic electrons to diffraction, and then interference.

Claims19

Dependent claims

A semiconductor device, comprising:

an epitaxial layer comprising a III-N heterostructure forming a channel, wherein the III-N heterostructure includes an InAlN/GaN composition formed by an InAlN layer and a GaN layer, wherein a concentration of In in the InAlN layer is tuned to lattice match the InAlN layer with the GaN layer, allowing electron mobility to generate ballistic electrons;
and
a fin structure located in the channel,
wherein the fin structure includes a gate formed transversely to a longitudinal axis of the channel, wherein the gate is controllable using a voltage over the fin structure, such that under influence of the voltage, the fin structure induces an energy-field opening a flow of ballistic electrons passing under the gate, which in turn changes a depletion width, subjecting the ballistic electrons to interference, and
wherein the semiconductor device is turned on by applying an amount of the voltage, and turned off by applying no amounts of the voltage.

2 more elements

A semiconductor device including a structure having a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a third arm channel of the third arm, wherein the third arm channel provided a flow path for ballistic electrons that are generated by a first voltage between the first arm and the second arm, the semiconductor device comprising:

a first fin structure located in the third arm channel and positioned at a distance from an end of the third arm, wherein the first fin structure includes a first gate formed transversely to a longitudinal axis of the first fin structure, and wherein the first gate is controllable using a second voltage over the fin structure, such that under influence of the second voltage, the first fin structure induces an energy-field opening a flow of the ballistic electrons passing under the first gate, which in turn changes a depletion width, subjecting the ballistic electrons to interference,
wherein the semiconductor device is turned on by applying an amount of the first and the second voltage, and turned off by applying no amounts of the first and the second voltage.

Dependencies are inferred from the claim text.

Inverter based on electron interference

Life of this patent

Inverter based on electron interference

Life of this patent

Abstract

Claims19