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US 11,545,421 B2Granted
Package including multiple semiconductor devices
AssigneeSemiconductor Components Industries, LLC
InventorsJerome Teysseyre, Maria Cristina Estacio, Seungwon Im
Life of this patent
Estimating the term…
Abstract
In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.
Claims20
An apparatus, comprising:
- an inner package including:
- a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and
- a second silicon carbide die having a die gate conductor coupled to the common gate conductor,
- an outer package including:
- a substrate coupled to the common gate conductor, and
- at least one clip coupled to the inner package and coupled to the substrate.
3 more elements
An apparatus, comprising:
- an inner package encapsulating in an insulator:
- at least a portion of a conductive metal layer including a common gate conductor, and
- a plurality of semiconductor die coupled to the common gate conductor of the conductive metal layer, the plurality of semiconductor die including a first silicon carbide die and a second silicon carbide die;
- and
- an outer package encapsulating:
- the inner package,
- a substrate coupled to the common gate conductor, and
- at least one clip, coupled to the inner package and coupled to the substrate.
5 more elements
An apparatus, comprising:
- an outer package including:
- a gate metal runner within a substrate, and
- at least one clip;
- an inner package disposed in the outer package and including:
- a first silicon carbide die having a gate conductor, and
- a second silicon carbide die having a gate conductor,
- a first conductive path between the gate metal runner and the gate conductor of the first silicon carbide die,
- a second conductive path between the gate metal runner and the gate conductor of the second silicon carbide die,
- the inner package being electrically coupled to the substrate of the outer package via the at least one clip.
6 more elements
Dependencies are inferred from the claim text.