Package comprising wire bonds configured as a heat spreader

An apparatus comprising:

• a substrate;
• an integrated device coupled to the substrate, wherein the integrated device comprises:
• a die substrate;
• a plurality of transistors located over the die substrate;
• at least one die interconnect configured to be free of electrical connection with the plurality of transistors;
• and
• at least one die substrate via coupled to the at least one die interconnect, wherein the at least one die substrate via extends through the die substrate;
• means for wire interconnection coupled to the integrated device and the substrate, wherein the means for wire interconnection is configured to provide at least one electrical path between the integrated device and the substrate;
• means for wire heat dissipation coupled to the integrated device, wherein the means for wire heat dissipation is configured to be free of an electrical connection with the plurality of transistors of the integrated device;
• and
• means for encapsulation located over the substrate and the integrated device, wherein the means for encapsulation encapsulates the integrated device, the means for wire interconnection and the means for wire heat dissipation.

A device comprising a package, the package comprising:

• a substrate;
• an integrated device coupled to the substrate, wherein the integrated device comprises:
• a die substrate;
• a plurality of transistors located over the die substrate;
• at least one die interconnect configured to be free of electrical connection with the plurality of transistors;
• and
• at least one die substrate via coupled to the at least one die interconnect, wherein the at least one die substrate via extends through the die substrate;
• a plurality of first wire bonds coupled to the integrated device and the substrate, wherein the plurality of first wire bonds is configured to provide at least one electrical path between the integrated device and the substrate;
• at least one second wire bond coupled to the at least one die interconnect of the integrated device, wherein the at least one second wire bond is configured to be free of an electrical connection with the plurality of transistors of the integrated device;
• and
• an encapsulation layer located over the substrate and the integrated device, wherein the encapsulation layer encapsulates the integrated device, the plurality of first wire bonds and the at least one second wire bond.

A method for fabricating package, comprising:

• providing a substrate;
• coupling an integrated device to the substrate, wherein the integrated device comprises:
• a die substrate;
• a plurality of transistors located over the die substrate;
• at least one die interconnect configured to be free of electrical connection with the plurality of transistors;
• and
• at least one die substrate via coupled to the at least one die interconnect, wherein the at least one die substrate via extends through the die substrate;
• coupling a plurality of first wire bonds to the integrated device and the substrate, wherein the plurality of first wire bonds is configured to provide at least one electrical path between the integrated device and the substrate;
• coupling at least one second wire bond to the integrated device, wherein the at least one second wire bond is configured to be free of an electrical connection with the plurality of transistors of the integrated device;
• and
• forming an encapsulation layer over the substrate and the integrated device, wherein the encapsulation layer encapsulates the integrated device, the plurality of first wire bonds and the at least one second wire bond.