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US 11,543,700 B2Granted
Method for driving liquid crystal display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHajime Kimura
Life of this patent
Estimating the term…
Abstract
A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming ater the super-resolution processing, accurate display can be performed.
Claims6
A semiconductor device comprising:
- a glass substrate;
- a gate electrode over and in contact with the glass substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer;
- a second oxide semiconductor layer over the first oxide semiconductor layer;
- a source electrode and a drain electrode over the second oxide semiconductor layer;
- a first insulating layer over the source electrode and the drain electrode;
- and
- a first electrode of a display element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the first electrode overlaps with the first oxide semiconductor layer and the second oxide semiconductor layer,
- wherein the source electrode or the drain electrode is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer, and
- wherein the gate insulating layer is in contact with the glass substrate, a side surface of the gate electrode, a bottom surface of the first oxide semiconductor layer, and a bottom surface of the source electrode or the drain electrode.
11 more elements
A semiconductor device comprising:
- a substrate;
- a gate electrode over and in contact with the substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer;
- a second oxide semiconductor layer over the first oxide semiconductor layer;
- a source electrode and a drain electrode over the second oxide semiconductor layer;
- a first insulating layer over the source electrode and the drain electrode;
- and
- a first electrode of a display element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the first electrode overlaps with the first oxide semiconductor layer and the second oxide semiconductor layer,
- wherein the source electrode or the drain electrode is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer, and
- wherein the gate insulating layer is in contact with the substrate, a side surface of the gate electrode, a bottom surface of the first oxide semiconductor layer, and a bottom surface of the source electrode or the drain electrode.
11 more elements
A semiconductor device comprising:
- a substrate;
- a gate electrode over and in contact with the substrate;
- a gate insulating layer over the gate electrode;
- a first oxide semiconductor layer over the gate insulating layer,
- a second oxide semiconductor layer over the first oxide semiconductor layer,
- a source electrode and a drain electrode over the second oxide semiconductor layer,
- a first insulating layer over the source electrode and the drain electrode;
- and
- a first electrode of a display element over the first insulating layer and electrically connected to the source electrode or the drain electrode via an opening in the first insulating layer,
- wherein the first oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the second oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the first electrode overlaps with the first oxide semiconductor layer and the second oxide semiconductor layer,
- wherein the source electrode or the drain electrode is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer,
- wherein the gate insulating layer is in contact with the substrate, a side surface of the gate electrode, a bottom surface of the first oxide semiconductor layer, and a bottom surface of the source electrode or the drain electrode, and
- wherein the first oxide semiconductor layer comprises a region having a smaller thickness than a region of the second oxide semiconductor layer.
12 more elements
Dependencies are inferred from the claim text.