Segmented pedestal for mounting device on chip
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLee-Chuan Tseng, Yuan-Chih Hsieh
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Abstract
A system includes a semiconductor substrate having a first cavity. The semiconductor substrate forms a pedestal adjacent the first cavity. A device overlays the pedestal and is bonded to the semiconductor substrate by metal within the first cavity. A plurality of second cavities are formed in a surface of the pedestal beneath the device, wherein the second cavities are smaller than the first cavity. In some of these teachings, the second cavities are voids. In some of these teachings, the metal in the first cavity comprises a eutectic mixture. The structure relates to a method of manufacturing in which a layer providing a mask to etch the first cavity is segmented to enable easy removal of the mask-providing layer from the area over the pedestal.
Claims20
A method, comprising:
- forming a dielectric matrix over a semiconductor substrate, wherein a first device structure is contained within the dielectric matrix;
- patterning the dielectric matrix with an opening and a plurality of slits in an area of the dielectric matrix adjacent the opening, wherein the opening is wider than the slits;
- etching the semiconductor substrate through the dielectric matrix to form a cavity beneath the opening and a pedestal adjacent the opening, wherein the pedestal is furrowed by trenches resulting from etching through the slits;
- etching to remove the dielectric matrix from the pedestal;
- placing a second device on the semiconductor substrate over the cavity and the pedestal;
- and
- bonding the second device to the semiconductor substrate using metal in the cavity to produce a structure in which the second device is abutting the pedestal.
A method, comprising:
- forming a dielectric matrix over a semiconductor substrate;
- patterning the dielectric matrix to define a first opening and an array of second openings in an area of the dielectric matrix adjacent the first opening, wherein the first opening is wider than each of the second openings;
- etching the semiconductor substrate through the dielectric matrix to form a cavity beneath the first opening, wherein the semiconductors substrate forms a pedestal adjacent the first opening in an area beneath the array of second openings;
- etching to remove the dielectric matrix from the pedestal;
- placing a second device on the semiconductor substrate over the cavity and the pedestal;
- and
- bonding the second device to the semiconductor substrate using metal in the cavity.
A method, comprising:
- forming a layer over a semiconductor substrate;
- patterning the layer to define an opening in the layer and a scored area of the layer that is adjacent the opening;
- etching the semiconductor substrate through the opening to form a cavity beneath the opening, wherein the semiconductor substrate defines a pedestal adjacent the cavity in an area beneath the scored area of the layer;
- etching to remove the scored area of the layer from the pedestal;
- placing a second device on the semiconductor substrate over the cavity and the pedestal;
- and
- bonding the second device to the semiconductor substrate using metal in the cavity.
Dependencies are inferred from the claim text.