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US 11,539,341 B2Granted
Acoustic wave device, multiplexer, and communication apparatus
AssigneeKYOCERA Corporation
InventorsTetsuya Kishino, Soichiro Nozoe, Motoki Ito
Life of this patent
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Abstract
An acoustic wave device includes a substrate, a multilayer film on the substrate, an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and an IDT electrode on the LT layer. The thickness of the LT layer is 0.3λ or less where λ is two times a pitch p of electrode fingers in the IDT electrode. Euler angles of the LT layer are (0°±20°, −5° to 65°, 0°±10°), (−120°±20°, −5° to 65°, 0°±10°), or (120°±20°, −5° to 65°, 0°±10°). The multilayer film configured by alternately stacking at least one first layer and at least one second layer. The first layer is comprised of SiO2. The second layer is comprised of any one of Ta2O5, HfO2, ZrO2, TiO2, and MgO.
Claims17
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of HFO2,
- the thickness of the LT layer is 0.1375λ to 0.1875λ,
- a thickness of the first layer is 0.05λ to 0.13λ, and
- a thickness of the second layer is 0.04λ to 0.11λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of Ta2O5,
- the thickness of the LT layer is 0.19λ to 0.21λ,
- a thickness of the first layer is 0.07λ to 0.13λ, and
- a thickness of the second layer is 0.95λ to 1.00λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of Ta2O5,
- the thickness of the LT layer is 0.165λ to 0.185λ,
- a thickness of the first layer is 0.06λ to 0.13λ, and
- a thickness of the second layer is 0.31λ to 0.34λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of Ta2O5,
- the thickness of the LT layer is 0.15λ to 0.205λ,
- a thickness of the first layer is 0.0625λ to 0.1375λ, and
- a thickness of the second layer is 0.0625λ to 0.10λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of ZRO2,
- the thickness of the LT layer is 0.125λ to 0.175λ,
- a thickness of the first layer is 0.085λ to 0.14λ, and
- a thickness of the second layer is 0.06λ to 0.12λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of TiO2,
- the thickness of the LT layer is 0.15λ to 0.2125λ,
- a thickness of the first layer is 0.055λ to 0.15λ, and
- a thickness of the second layer is 0.11λ to 0.24λ.
13 more elements
An acoustic wave device comprising:
- a substrate,
- a multilayer film on the substrate,
- an LT layer configured by a single crystal of LiTaO3 on the multilayer film, and
- an IDT electrode on the LT layer, wherein
- a thickness of the LT layer is 0.3λ or less, where λ is two times a pitch of electrode fingers in the IDT electrode,
- Euler angles of the LT layer are
- (0°±20°, −5° to 65°, 0°±10°),
- (−120°±20°, −5° to 65°, 0°±10°),
- (120°±20°, −5° to 65°, 0°±10°),
- the multilayer film is configured by alternately stacking at least one first layer and at least one second layer,
- the first layer is comprised of SiO2, and
- the second layer is comprised of any one of Ta2O5, HFO2, ZrO2, TiO2, and MgO, wherein:
- the second layer is comprised of MgO2,
- the thickness of the LT layer is 0.1375λ to 0.20λ,
- a thickness of the first layer is 0.65λ to 0.15λ, and
- a thickness of the second layer is 0.09λ to 0.23λ.
13 more elements
Dependencies are inferred from the claim text.