Solid-state imaging element and electronic device

A solid-state imaging element comprising at least:

• a first photoelectric conversion section;
• and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, wherein
• the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and
• a hydrogen concentration of the first oxide semiconductor layer is lower than a hydrogen concentration of the second oxide semiconductor layer.

A solid-state imaging element comprising at least:

• a first photoelectric conversion section;
• and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, wherein
• the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order,
• a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer, and
• a hydrogen concentration of the first oxide semiconductor layer is lower than a hydrogen concentration of the second oxide semiconductor layer.