Methods of forming a memory cell comprising a metal chalcogenide material

A method of forming a memory cell, comprising:

• forming a dielectric material adjacent to a conductive material, the dielectric material comprising one or more openings therein;
• forming a contact in the one or more openings in the dielectric material;
• forming an active material in direct contact with the contact and the dielectric material;
• forming an ion source material adjacent to the active material by atomic layer deposition;
• forming an insulator in direct contact with a top surface of the active material;
• and
• forming another conductive material adjacent to the ion source material and the insulator, wherein the another conductive material is in direct contact with an entire top surface of the ion source material.

A method of forming a memory cell, comprising:

• forming a dielectric material adjacent to a conductive material, the dielectric material comprising one or more openings therein;
• forming a contact in the one or more openings in the dielectric material;
• forming an active material directly over the contact and directly over the dielectric material;
• forming an amorphous ion source material by atomic layer deposition directly over the active material, the amorphous ion source material comprising a metal chalcogenide material comprising a greater proportion of a metal relative to a chalcogen;
• and
• forming another conductive material adjacent to the amorphous ion source material.