Method for manufacturing a resistive random access memory structure
AssigneeUnited Microelectronics Corp.
InventorsWen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
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Abstract
A method for forming a resistive random access memory structure. The resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.
Claims5
A method for forming a resistive random access memory structure, comprising:
- forming a bottom electrode;
- forming a variable resistance layer disposed on the bottom electrode;
- forming a top electrode disposed on the variable resistance layer;
- forming a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar;
- and
- forming an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.
Dependencies are inferred from the claim text.