US 11,538,988 B2 · Memory device with multi-layer liner structure

Abstract

A memory cell design is disclosed. The memory cell structure includes phase change and selector layers stacked between top and bottom electrodes. An ohmic contact may be included between the phase change and selector layers. A multi-layer liner structure is provided on sidewalls of the phase change layer. In some such cases, the liner structure is above and not on sidewalls of the selector layer. The liner structure includes a first dielectric layer, and a second dielectric layer on the first dielectric layer. The liner structure includes a third dielectric layer on the second dielectric layer and that is sacrificial in nature, and may not be present in the final structure. The second dielectric layer comprises a high-k dielectric material or a metal silicate material. The second dielectric layer protects the phase change layer from lateral erosion and physical vertical etch and provides etch selectivity during the fabrication process.

Claims19

Dependent claims

A memory device comprising:

a first memory cell in an array and including a first layer of phase change material, the first layer including a first sidewall;
a second memory cell in the array and laterally adjacent but spaced from the first memory cell, the second memory cell including a second layer of the phase change material, the second layer including a second sidewall that faces the first sidewall;
a first dielectric structure including first and second dielectric layers, the first dielectric layer on the first sidewall, and the second dielectric layer on the first dielectric layer and comprising a high-k dielectric or a metal silicate;
and
a second dielectric structure on the second sidewall, wherein the first memory cell further includes a first selector layer, and the first dielectric structure is not on the first selector layer, and wherein the second memory cell further includes a second selector layer, and the second dielectric structure is not on the second selector layer.

2 more elements

Dependencies are inferred from the claim text.

Memory device with multi-layer liner structure

Life of this patent

Memory device with multi-layer liner structure

Life of this patent

Abstract

Claims19