IrAl as a non-magnetic spacer layer for formation of synthetic anti-ferromagnets (SAF) with Heusler compounds

A device, comprising:

• a plurality of memory elements, each of the plurality of memory elements including:
• a first magnetic layer;
• a templating structure on the first magnetic layer, including D and E, a ratio of D to E being represented by D1-xEx, with x being at least 0.47 and not more than 0.54, E including a main constituent, the main constituent including at least one of Al, Ga, and Ge, E including at least fifty atomic percent of the main constituent, D including at least one constituent that includes Ir, D including at least 50 atomic percent of the at least one constituent, the templating structure being nonmagnetic at room temperature;
• and
• a second magnetic layer epitaxially grown on the templating structure, at least one of the first magnetic layer and the second magnetic layer including at least one of a Heusler compound and an L10 compound, the second magnetic layer being in contact with the templating structure and being magnetic as-deposited at room temperature.

A method, comprising:

• providing a first magnetic layer;
• providing a templating structure on the first magnetic layer, the templating structure including D and E, a ratio of D to E being represented by D1-xEx, with x being at least 0.4 and not more than 0.6, E including a main constituent, the main constituent including at least one of Al, Ga, and Ge, E including at least fifty atomic percent of the main constituent, D including at least one constituent that includes Ir, D including at least 50 atomic percent of the at least one constituent, the templating structure being nonmagnetic at room temperature;
• and
• providing a second magnetic layer epitaxially grown on the templating structure, at least one of the first magnetic layer and the second magnetic layer including at least one of a Heusler compound and an L10 compound.