Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device
AssigneeHeFeChip Corporation Limited
InventorsQinli Ma, Wei-Chuan Chen, Shu-Jen Han
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Abstract
A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer.
Claims28
A storage layer of a magnetic tunnel junction (MTJ) element, comprising:
- a first ferromagnetic layer;
- a first dust layer disposed directly on the first ferromagnetic layer, wherein the first dust layer is a discontinuous layer and has a thickness of about 1 angstrom;
- a second ferromagnetic layer disposed directly on the first dust layer, wherein the second ferromagnetic layer is in direct contact with the first ferromagnetic layer within a discontinuity region in the first dust layer;
- a second dust layer disposed directly on the second ferromagnetic layer, wherein a material of the first dust layer is different from a material of the second dust layer;
- and
- a third ferromagnetic layer disposed directly on the second dust layer.
A magnetic memory device, comprising:
- a bottom electrode;
- a top electrode;
- and
- a magnetic tunnel junction (MTJ) element interposed between the bottom electrode and the top electrode, wherein the MTJ element comprises a reference layer, a tunnel barrier layer, and a storage layer, wherein the storage layer comprises a first ferromagnetic layer;
- a first dust layer disposed directly on the first ferromagnetic layer;
- a second ferromagnetic layer disposed directly on the first dust layer;
- a second dust layer disposed directly on the second ferromagnetic layer;
- and a third ferromagnetic layer disposed directly on the second dust layer, wherein the first dust layer is a discontinuous layer and has a thickness of about 1 angstrom, and wherein a material of the first dust layer is different from a material of the second dust layer, wherein the second ferromagnetic layer is in direct contact with the first ferromagnetic layer within a discontinuity region in the first dust layer.
Dependencies are inferred from the claim text.